International Conference on Nitride Semiconductors

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International Conference on Nitride Semiconductors
AbbreviationICNS
DisciplineMaterials Science Solid State Physics Electronic Engineering
Publication details
PublisherWiley-VCH Physica Status Solidi
History1995–
FrequencyBiennial
The Scottish Exhibition and Conference Centre in Glasgow, venue for ICNS-9

The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.

ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 was held in Strasbourg, France on 24–28 July 2017.

ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, and was chaired by Alan Doolittle (Georgia Institute of Technology, USA)[1]

The ICNS-14 was held in Fukuoka, Japan, from 12-17 November 2023. [2] The conference had a total number of 1241 participants. 424 oral presentations were given and 407 posters presented. Plenary talks were given by Hiroshi Amano (Nagoya University, Japan), Debdeep Jena (Cornell University, USA), Elison Matioli (EPFL, Switzerland), Takashi Mukai (Nichia Corp, Japan), Åsa Haglund (Chalmers University of Technology, Sweden), Aurélien David (Google, USA), Ken Nakata (Sumitomo Electric Industries Ltd., Japan).

The ICNS-15[3] will be held in Malmö, Sweden from 6-11 July 2025. ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-15 will celebrate the achievements of Profs. Bo Monemar and Tadek Suski as honorary chairs. Conference chairs are Vanya Darakchieva (Lund University), Piotr Perlin (Center for High Pressure Research at the Polish Academy of Sciences (Unipress), Warsaw, Poland) and Lars Samuelson (Lund University, Sweden and Southern University of Science and Technology (SUSTech), Shenzhen, China).

Conference list[edit]

Conference name Location Dates
ICNS-15[4] Sweden Malmö, Sweden 6-11 July 2025
ICNS-14[5] Japan Fukuoka, Japan 12-17 November 2023
ICNS-13[6] United States Bellevue, Washington, Seattle’s Eastside, United States 7–12 July 2019
ICNS-12[7] France Strasbourg, France 24–28 July 2017
ICNS-11[8] China Beijing, China 30 August – 4 September 2015
ICNS-10[9] United States Washington D.C., United States 25–30 August 2013
ICNS-9[10] United Kingdom Glasgow, UK 10–15 July 2011
ICNS-8[11] South Korea Jeju, Korea 18–23 October 2009
ICNS-7[12][13] United States Las Vegas, United States 16–21 September 2007
ICNS-6[14] Germany Bremen, Germany 28 August – 2 September 2005
ICNS-5[15] Japan Nara, Japan 25–30 May 2003
ICNS-4[16] United States Denver, United States 16–20 July 2001
ICNS-3[17] France Montpellier, France 4–9 July 1999
ICNS-2[18] Japan Tokushima, Japan 27–31 October 1997
TWN'95[19] Japan Nagoya, Japan 21–23 September 1995


See also[edit]

References[edit]

  1. ^ "IWN2016" (PDF).
  2. ^ "14th International Conference on Nitride Semiconductors". icns14.jp. Retrieved 2024-03-08.
  3. ^ "ICNS-15". mkon.nu. Retrieved 2024-03-08.
  4. ^ "ICNS-15". mkon.nu. Retrieved 2024-03-08.
  5. ^ "14th International Conference on Nitride Semiconductors". icns14.jp. Retrieved 2024-03-08.
  6. ^ mrs.org/icns-13 https://www.mrs.org/icns-13. Retrieved 2019-07-18. {{cite web}}: Missing or empty |title= (help)
  7. ^ icns-12.coulomb.univ-montp2.fr http://icns-12.coulomb.univ-montp2.fr/. Retrieved 2016-09-29. {{cite web}}: Missing or empty |title= (help)
  8. ^ G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C 13 (5–6) 177–180 doi:10.1002/pssc.201670126
  9. ^ J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C 11 (3–4) 370–372 doi:10.1002/pssc.201470048
  10. ^ P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C 9 (3–4) 430–432 doi:10.1002/pssc.201260134
  11. ^ S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C 7 (7-8) 1737–1742 doi:10.1002/pssc.201060095
  12. ^ "ICNS-7: Home Page".
  13. ^ S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C 5 1472–1474 doi:10.1002/pssc.200860019
  14. ^ "Events Archive".
  15. ^ H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C 0 1977 doi:10.1002/pssc.200390139
  16. ^ Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A 188 (1–2); Part B Physica Status Solidi B 228 (1–2) ISBN 3-527-40347-7
  17. ^ Article title
  18. ^ A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 doi:10.1016/S0961-1290(97)86971-2
  19. ^ Topical Workshop on III-V Nitrides
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