Tribovoltaic effect

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The tribovoltaic effect is a mechanism that a direct-current (DC) current is generated by sliding a P-type semiconductor on top of a N-type semiconductor or a metal surface without the illumination of photons, which was firstly proposed by Wang et al.[1] in 2019 and later proved experimentally in 2020. When a P-type semiconductor slides over a N-type semiconductor, an energy “quantum” also named as “bindington” will be released at the interface due to the formation of newly formed chemical bonds between two atoms across the interface. The released energy can excite electron-hole pairs at the interface, which are further separated and moved from one side to the other side under the built-in electric field at the semiconductor interface, generating a DC in external circuit. Recent researches have shown that the tribovoltaic effect can occur at various interfaces, such as metal-semiconductor interface,[2] P-N semiconductors interface,[3] metal-insulator-semiconductor interface[4], metal-insulator-metal interface,[5] and liquid-semiconductor interface.[6][7] Furthermore, the interfacial engineering and material engineering are important for enhanced tribovoltaic effect to realize high-performance DC tribovoltaic nanogenerators. The tribovoltaic effect will find important potential applications in the fields of energy harvesting, smart sensor, data storage, and material characterization, etc.[3]

Nomenclature[edit]

The generation of tribo-current at the sliding PN junction or Schottky junction is analogous to the generation of photo-current in the photovoltaic effect, and the only difference is that the energy for exciting the electron-hole pairs is different, so that it is named as “tribovoltaic effect” by Wang et al.

Experimental evidence[edit]

The tribovoltaic effect was verified experimentally as both macro- and nano-scale. It was found that a direct current can be generated by sliding the N-type diamond coated tip over the P-type Si samples, and the direction of the tribo-current is depended on the direction of the built-in electric field at the PN and Schottky junctions.

The experiment evidence of tribovoltaic effect.

Tribovoltaic effect at different interfaces[edit]

Metal-semiconductor interface. When a Pt-coated silicon atomic force microscopy (AFM) tip rubs on molybdenum disulfide (MoS2) surface, a DC current with a maximum density of 106 A/m2 is generated.[2] Then, using a pure Pt tip to rub both the p-type and N-type silicon samples, the correctness of the tribovoltaic effect has been verified from the perspective of DC direction.[3]

P-N semiconductors interface. When using a N-type silicon to rub with a P-type Si, a DC current from the P-type Si to the N-type silicon is produced, with the same direction as the built-in electric field at the PN junction.[8] Furthermore, when a N-type diamond-coated silicon tip is used to rub with the surfaces of N-type silicon and P-type Si, the tribo-current can be generated at the interfaces of N-type tip and P-type Si.[3] These observations verify the occurrence of the tribovoltaic effect at the PN junction.

Liquid-semiconductor interface. The tribovoltaic effect can also occur at aqueous solution and solid semiconductor interface, in which the aqueous solution is considered as a liquid semiconductor.[9][10][11][12] When a water droplet slides over a semiconductor surface, the built-in electric field will exist at the interface due to the difference in the Fermi levels, and some water molecules will contact the fresh surface, forming chemical bonds and releasing energy, and the released energy “quantum”, also named as “bindington”. If the liquid starts to slide on the solid semiconductor surface, the bindington will be released and electron-hole pairs will be excited at the interface. Driven by the built-in electric field, the electron-hole pairs are separated and move from one side to the other side, generating a continuous DC in external load. The tribovoltaic effect at liquid-solid interface was also verified experimentally by Wang et al.[7][13]

References[edit]

  1. ^ Wang, Zhong Lin; Wang, Aurelia Chi (2019-11-01). "On the origin of contact-electrification". Materials Today. 30: 34–51. doi:10.1016/j.mattod.2019.05.016. ISSN 1369-7021. S2CID 189987682.
  2. ^ a b Liu, Jun; Goswami, Ankur; Jiang, Keren; Khan, Faheem; Kim, Seokbeom; McGee, Ryan; Li, Zhi; Hu, Zhiyu; Lee, Jungchul; Thundat, Thomas (February 2018). "Direct-current triboelectricity generation by a sliding Schottky nanocontact on MoS2 multilayers". Nature Nanotechnology. 13 (2): 112–116. doi:10.1038/s41565-017-0019-5. ISSN 1748-3387. PMID 29230042.
  3. ^ a b c d Zheng, Mingli; Lin, Shiquan; Xu, Liang; Zhu, Laipan; Wang, Zhong Lin (May 2020). "Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors". Advanced Materials. 32 (21): e2000928. Bibcode:2020AdM....3200928Z. doi:10.1002/adma.202000928. ISSN 0935-9648. PMID 32270901.
  4. ^ Liu, Jun; Liu, Feifei; Bao, Rima; Jiang, Keren; Khan, Faheem; Li, Zhi; Peng, Huihui; Chen, James; Alodhayb, Abdullah; Thundat, Thomas (2019-09-25). "Scaled-up Direct-Current Generation in MoS 2 Multilayer-Based Moving Heterojunctions". ACS Applied Materials & Interfaces. 11 (38): 35404–35409. doi:10.1021/acsami.9b09851. ISSN 1944-8244. PMID 31476860.
  5. ^ Benner, Matthew; Yang, Ruizhe; Lin, Leqi; Liu, Maomao; Li, Huamin; Liu, Jun (2022-01-19). "Mechanism of In-Plane and Out-of-Plane Tribovoltaic Direct-Current Transport with a Metal/Oxide/Metal Dynamic Heterojunction". ACS Applied Materials & Interfaces. 14 (2): 2968–2978. doi:10.1021/acsami.1c22438. ISSN 1944-8244. PMID 34990542.
  6. ^ Zheng, Mingli; Lin, Shiquan; Zhu, Laipan; Tang, Zhen; Wang, Zhong Lin (January 2022). "Effects of Temperature on the Tribovoltaic Effect at Liquid-Solid Interfaces". Advanced Materials Interfaces. 9 (3). doi:10.1002/admi.202101757. ISSN 2196-7350.
  7. ^ a b Zheng, Mingli; Lin, Shiquan; Tang, Zhen; Feng, Yawei; Wang, Zhong Lin (May 2021). "Photovoltaic effect and tribovoltaic effect at liquid-semiconductor interface". Nano Energy. 83: 105810. doi:10.1016/j.nanoen.2021.105810.
  8. ^ Xu, Ran; Zhang, Qing; Wang, Jing Yuan; Liu, Di; Wang, Jie; Wang, Zhong Lin (2019-12). "Direct current triboelectric cell by sliding an n-type semiconductor on a p-type semiconductor". Nano Energy. 66: 104185. doi:10.1016/j.nanoen.2019.104185. {{cite journal}}: Check date values in: |date= (help)
  9. ^ Copeland, A. Wallace.; Black, Otis D.; Garrett, A. B. (1942-08-01). "The Photovoltaic Effect". Chemical Reviews. 31 (1): 177–226. doi:10.1021/cr60098a004. ISSN 0009-2665.
  10. ^ Williams, F.; Nozik, A. J. (November 1984). "Solid-state perspectives of the photoelectrochemistry of semiconductor–electrolyte junctions". Nature. 312 (5989): 21–27. Bibcode:1984Natur.312...21W. doi:10.1038/312021a0. ISSN 1476-4687. S2CID 4350548.
  11. ^ Lewis, Nathan S. (1998-06-01). "Progress in Understanding Electron-Transfer Reactions at Semiconductor/Liquid Interfaces". The Journal of Physical Chemistry B. 102 (25): 4843–4855. doi:10.1021/jp9803586. ISSN 1520-6106.
  12. ^ Iqbal, Asif; Hossain, Md Sazzad; Bevan, Kirk H. (2016-10-26). "The role of relative rate constants in determining surface state phenomena at semiconductor–liquid interfaces". Physical Chemistry Chemical Physics. 18 (42): 29466–29477. Bibcode:2016PCCP...1829466I. doi:10.1039/C6CP04952D. ISSN 1463-9084. PMID 27738683.
  13. ^ Lin, Shiquan; Chen, Xiangyu; Wang, Zhong Lin (2020-10-01). "The tribovoltaic effect and electron transfer at a liquid-semiconductor interface". Nano Energy. 76: 105070. doi:10.1016/j.nanoen.2020.105070. ISSN 2211-2855. S2CID 224872429.
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